Sequential Use of Orthogonal Self‐Assembled Monolayers for Area‐Selective Atomic Layer Deposition of Dielectric on Metal

Although there have been several demonstrations of area-selective atomic layer deposition (AS-ALD) dielectric on in metal/dielectric patterns, the reverse process selective metal (DoM) is not as well developed due to challenge inhibiting only dielectrics. Unavoidable native oxide formation metals tends lead similar surface chemical properties between and substrates, decreasing selectivity inhibitor adsorption. Hence, achieve DoM, preventing unwanted adsorption critical. This study demonstrates a two-step strategy first applying dodecanethiol (DDT) self-assembled monolayer (SAM) Cu/SiO2 pattern protect Cu surfaces from subsequent an octadecyltrimethoxysilane (OTMS) inhibitor, which then selectively forms OTMS SAM SiO2. It further shown that by removing DDT protector with thermal treatment before AS-ALD, ALD growth affected while remains blocked OTMS-covered SiO2 regions. Using this strategy, DoM demonstrated above 0.9 after 5.6 nm ZnO 1.5 Al2O3 ALD. work presents new approach expand material systems available AS-ALD may help enable more applications microelectronics, optoelectronics, energy.